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From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots

Identifieur interne : 00A793 ( Main/Repository ); précédent : 00A792; suivant : 00A794

From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots

Auteurs : RBID : Pascal:04-0120248

Descripteurs français

Pascal (Inist)
- 7343Q, 7321L, Etude expérimentale, Effet Hall quantique, Gallium arséniure, Gaz électron, Niveau Landau, Point quantique semiconducteur, Autoassemblage, Indium composé, Semiconducteur III-V, Effet Shubnikov de Haas, Localisation faible.

English descriptors

KwdEn :
- Electron gas, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Landau levels, Quantum Hall effect, Self-assembly, Semiconductor quantum dots, Shubnikov-de Haas effect, Weak localisation.

Abstract

We have studied insulator-quantum Hall-insulator (I-QH-I) transitions in a gated two-dimensional GaAs electron gas containing InAs quantum dots. In this system Shubnikov-de Haas oscillations are observed in both the low-field and high-field insulating regimes, showing that Landau quantization and localization can coexist. A phase diagram is constructed based on our experimental results, and we see that the critical points of the I-QH-I transitions do not correspond to crossover from localization to Landau quantization. Moreover, good scaling behavior is observed on both sides of low- and high-field I-QH transitions.

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Pascal:04-0120248

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<author><name sortKey="Chang, Y H" uniqKey="Chang Y">Y. H. Chang</name>
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<front><div type="abstract" xml:lang="en">We have studied insulator-quantum Hall-insulator (I-QH-I) transitions in a gated two-dimensional GaAs electron gas containing InAs quantum dots. In this system Shubnikov-de Haas oscillations are observed in both the low-field and high-field insulating regimes, showing that Landau quantization and localization can coexist. A phase diagram is constructed based on our experimental results, and we see that the critical points of the I-QH-I transitions do not correspond to crossover from localization to Landau quantization. Moreover, good scaling behavior is observed on both sides of low- and high-field I-QH transitions.</div>
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From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots

From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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